BUK9624-55A,118 NXP Semiconductors, BUK9624-55A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK9624-55A,118
• Description: MOSFET N-CH 55V 46A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9624-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1815pF @ 25V
• Power - Max: 105W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0217 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 46 A
• Power Dissipation: 105000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056287118; BUK9624-55A /T3; BUK9624-55A /T3

Philips Semiconductors
9397 750 07538
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
function of mounting base temperature.
P der (%)
= 25 C; I
=
----------------------
P
120
100
80
60
40
20
tot 25 C
0
P
0
tot
DM
25
single pulse.
1000
100%
100
(A)
I D
10
50
1
1
75
P
100
t p
T
R DSon = V DS / I D
125
=
150
t p
T
T mb ( o C)
t
175
03na19
Rev. 01 — 29 September 2000
200
BUK9524-55A; BUK9624-55A
10
D.C.
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of mounting base temperature.
=
4.5 V
I der
------------------ -
I
120
(%)
100
D 25 C
80
60
40
20
0
I
D
0
25
100%
V DS (V)
50
tp = 10 us
100 us
1 ms
10 ms
100 ms
TrenchMOS™ logic level FET
75
03na08
100
100
© Philips Electronics N.V. 2000. All rights reserved.
125
150
T mb ( o C)
175
03aa24
200
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