BSH205,215 NXP Semiconductors, BSH205,215 Datasheet - Page 5

• Manufacturer Part Number: BSH205,215
• Description: MOSFET P-CH 12V 750MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BSH205,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 430mA, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 750mA
• Vgs(th) (max) @ Id: 680mV @ 1mA
• Gate Charge (qg) @ Vgs: 3.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 9.6V
• Power - Max: 417mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.75 A
• Power Dissipation: 417 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054721215; BSH205 T/R; BSH205 T/R

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-6
-5
-4
-3
-2
-1
0
0
Gate-source voltage, VGS (V)
VDD = 10 V
RD = 20 Ohms
Tj = 25 C
1
Gate charge, (nC)
V
2
GS
= f(Q
3
G
)
4
BSH205
5
5
4.5
3.5
2.5
1.5
0.5
I
5
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
0.2
); conditions: V
Drain-Source Voltage, VSDS (V)
0.4
0.6
150 C
GS
0.8
= 0 V; parameter T
Product specification
Tj = 25 C
1
1.2
BSH205
BSH205
Rev 1.000
1.4
j