BSH205,215 NXP Semiconductors, BSH205,215 Datasheet - Page 2

MOSFET P-CH 12V 750MA SOT-23

BSH205,215

Manufacturer Part Number
BSH205,215
Description
MOSFET P-CH 12V 750MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSH205,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 430mA, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
750mA
Vgs(th) (max) @ Id
680mV @ 1mA
Gate Charge (qg) @ Vgs
3.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
200pF @ 9.6V
Power - Max
417mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.75 A
Power Dissipation
417 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934054721215
BSH205 T/R
BSH205 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSH205,215
Manufacturer:
PLX
Quantity:
101
Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
August 1998
P-channel enhancement mode
MOS transistor
SYMBOL PARAMETER
V
V
R
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
j
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
GSS
DSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
fs
(BR)DSS
GS(TO)
DS(ON)
iss
oss
rss
SD
g(tot)
gs
gd
rr
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Input capacitance
Output capacitance
Feedback capacitance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
V
V
V
V
V
V
V
V
I
V
V
Resistive load
V
D
GS
DS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
= -0.5 A; V
CONDITIONS
T
I
I
V
= 0 V; I
= V
= -4.5 V; I
= -2.5 V; I
= -1.8 V; I
= -2.5 V; I
= -9.6 V; I
= 8 V; V
= -9.6 V; V
= -10 V; I
= -8 V; R
= 0 V; V
F
F
a
GS
= -0.38 A; V
= -0.5 A; -dI
= 25 ˚C
GS
= 0 V; V
; I
D
D
DS
DD
= -10 A
= -1 mA
G
DS
D
D
D
D
D
D
2
= 6
= -9.6 V; f = 1 MHz
GS
= -0.5 A;
= -10 V; V
= -430 mA
= -430 mA
= -430 mA
= -210 mA
= -430 mA; T
= 0 V
R
= 0 V;
= -9.6 V
F
GS
/dt = 100 A/ s;
= 0 V
GS
= -4.5 V
j
= 150˚C
T
T
j
j
= 150˚C
= 150˚C
MIN.
-
-
-
-
-
MIN.
-0.4
-0.1
-12
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.72
TYP.
75
69
-0.68
TYP. MAX. UNIT
0.18
0.32
0.42
0.48
-
-
Product specification
200
-50
-11
1.6
3.8
0.4
1.0
4.5
45
20
95
41
10
2
-
-
MAX.
-0.75
-1.3
0.75
-100
-100
-3
0.4
0.5
0.6
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BSH205
Rev 1.000
UNIT
nC
ns
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
A
V
V
V
V
S
A

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