BSH205,215 NXP Semiconductors, BSH205,215 Datasheet - Page 3

• Manufacturer Part Number: BSH205,215
• Description: MOSFET P-CH 12V 750MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BSH205,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 430mA, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 750mA
• Vgs(th) (max) @ Id: 680mV @ 1mA
• Gate Charge (qg) @ Vgs: 3.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 9.6V
• Power - Max: 417mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.75 A
• Power Dissipation: 417 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054721215; BSH205 T/R; BSH205 T/R

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
ID% = 100 I
120
100
120
100
0.01
100
80
60
40
20
80
60
40
20
0.1
10
I
0
0
Fig.2. Normalised continuous drain current.
1
D
0.1
0
0
& I
Normalised Power Dissipation, PD (%)
Normalised Drain Current, ID (%)
Peak Pulsed Drain Current, IDM (A)
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
DM
RDS(on) = VDS/ ID
= f(V
25
25
PD% = 100 P
D
/I
D 25 ˚C
DS
Drain-Source Voltage, VDS (V)
Ambient Temperature, Ta (C)
Ambient Temperature, Ta (C)
); I
50
50
1
= f(T
DM
single pulse; parameter t
d.c.
a
D
); conditions: V
75
75
/P
D 25 ˚C
100
100
= f(T
10
tp = 100 us
1 ms
100 ms
10 ms
a
= 25 ˚C
a
)
125
125
GS
BSH205
-10 V
150
150
100
p
3
1000
-1.4
-1.2
-0.8
-0.6
-0.4
-0.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Fig.5. Typical output characteristics, T
100
0.1
-1
3
2
1
0
Fig.6. Typical on-state resistance, T
10
0
1
1E-06
0
Drain-Source On Resistance, RDS(on) (Ohms)
0
-0.9 V
Drain current, ID (A)
Peak Pulsed Drain Current, IDM (A)
D = 0.5
0.1
0.02
single pulse
Fig.4. Transient thermal impedance.
4.5 V
-0.2
0.05
1E-05
0.2
Z
R
th j-a
-1V
I
DS(ON)
-2.5 V
D
-1.1 V
-0.5
= f(V
Drain-Source Voltage, VDS (V)
-0.4
Drain Current, ID (A)
1E-04
= f(t); parameter D = t
-1.2 V
= f(I
DS
Pulse width, tp (s)
-1.8 V
-0.6
1E-03
); parameter V
D
); parameter V
-1
-1.3 V
-0.8
1E-02
P
Product specification
D
1E-01
-1
-1.4 V
-1.5
-2.5 V
GS
VGS = -4.5V
tp
VGS = -1.4 V
p
GS
T
/T
Tj = 25 C
-1.2
j
1E+00 1E+01
Tj = 25 C
D = tp/T
= 25 ˚C .
BSH105
j
BSH205
BSH205
-1.8 V
-0.9 V
= 25 ˚C .
BSH205
-1.1 V
-1.3 V
-1.2 V
-1 V
Rev 1.000
-1.4
-2