BSH205 T/R NXP Semiconductors, BSH205 T/R Datasheet

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BSH205 T/R

Manufacturer Part Number
BSH205 T/R
Description
MOSFET TAPE7 MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BSH205_TR.pdf (7 pages)

Specifications of BSH205 T/R

Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.75 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Fall Time
4.5 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
417 mW
Rise Time
4.5 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
45 ns
Part # Aliases
BSH205,215
Philips Semiconductors
FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
GENERAL DESCRIPTION
P-channel, enhancement mode,
logic
transistor. This device has low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH205 is supplied in the
SOT23
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
August 1998
P-channel enhancement mode
MOS transistor
SYMBOL
V
V
V
I
I
P
T
SYMBOL
R
D
DM
stg
DS
DGR
GS
tot
th j-a
, T
j
level,
subminiature
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
ambient
field-effect
surface
power
PINNING
SYMBOL
PIN
1
2
3
gate
source
drain
g
CONDITIONS
R
T
T
T
T
T
CONDITIONS
FR4 board, minimum
footprint
a
a
a
a
a
GS
DESCRIPTION
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 100 ˚C
= 20 k
1
d
s
QUICK REFERENCE DATA
SOT23
R
DS(ON)
TYP.
MIN.
- 55
300
-
-
-
-
-
-
-
-
V
V
I
GS(TO)
0.5
D
DS
= -0.75 A
Product specification
1
= -12 V
MAX.
0.417
MAX.
-0.75
-0.47
0.17
150
-12
-12
-3
-
(V
3
8
0.4 V
GS
Top view
2
= -2.5 V)
BSH205
Rev 1.000
UNIT
UNIT
K/W
W
W
˚C
V
V
V
A
A
A

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BSH205 T/R Summary of contents

Page 1

Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold ...

Page 2

Philips Semiconductors P-channel enhancement mode MOS transistor ELECTRICAL CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER V Drain-source breakdown (BR)DSS voltage V Gate threshold voltage GS(TO) R Drain-source on-state DS(ON) resistance g Forward transconductance fs I Gate source ...

Page 3

Philips Semiconductors P-channel enhancement mode MOS transistor Normalised Power Dissipation, PD (%) 120 100 Ambient Temperature, Ta (C) Fig.1. Normalised power dissipation. PD% = 100 ˚C ...

Page 4

Philips Semiconductors P-channel enhancement mode MOS transistor Drain Current, ID (A) -3 VDS > RDS(on) -2 -1 -0.5 -1 -1.5 Gate-Source Voltage, VGS (V) Fig.7. Typical transfer characteristics. I ...

Page 5

Philips Semiconductors P-channel enhancement mode MOS transistor Gate-source voltage, VGS (V) -6 VDD = Ohms - Gate charge, (nC) Fig.13. Typical turn-on ...

Page 6

Philips Semiconductors P-channel enhancement mode MOS transistor MECHANICAL DATA Plastic surface mounted package; 3 leads 1 DIMENSIONS (mm are the original dimensions UNIT A max. 1.1 mm 0.1 0.9 OUTLINE VERSION SOT23 Notes 1. This product is supplied ...

Page 7

Philips Semiconductors P-channel enhancement mode MOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification ...

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