BSH205,215 NXP Semiconductors, BSH205,215 Datasheet - Page 4

• Manufacturer Part Number: BSH205,215
• Description: MOSFET P-CH 12V 750MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BSH205,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 430mA, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 750mA
• Vgs(th) (max) @ Id: 680mV @ 1mA
• Gate Charge (qg) @ Vgs: 3.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 9.6V
• Power - Max: 417mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.75 A
• Power Dissipation: 417 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054721215; BSH205 T/R; BSH205 T/R

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.9. Normalised drain-source on-state resistance.
-2.5
-1.5
-0.5
3.5
2.5
1.5
0.5
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
-3
-2
-1
3
2
1
0
2
1
Fig.8. Typical transconductance, T
0
0
0
Normalised Drain-Source On Resistance
0
Transconductance, gfs (S)
Drain Current, ID (A)
VDS > ID X RDS(on)
VDS > ID X RDS(on)
RDS(ON) @ 25C
Fig.7. Typical transfer characteristics.
RDS(ON) @ Tj
-0.2
-0.4
-0.5
25
-0.6
R
DS(ON)
Gate-Source Voltage, VGS (V)
Junction Temperature, Tj (C)
-0.8
50
-1
Drain Current, ID (A)
/R
I
-1
D
g
fs
= f(V
DS(ON)25 ˚C
Tj = 25 C
-1.2
= f(I
-1.5
75
-1.4
Tj = 25 C
GS
D
)
)
-1.6
VGS = -4.5 V
= f(T
100
-2
-1.8
150 C
j
)
-2
j
-2.5
= 25 ˚C .
125
-2.2
-2.5 V
150 C
BSH205
BSH205
-2.4
-1.8 V
-2.6
150
-3
4
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
1000
100
0
V
10
Fig.12. Typical capacitances, C
C = f(V
0
GS(TO)
-0.1
Threshold Voltage, VGS(to), (V)
-1
Capacitances, Ciss, Coss, Crss (pF)
Drain Current, ID (A)
Fig.11. Sub-threshold drain current.
-0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1
Fig.10. Gate threshold voltage.
I
= f(T
D
25
DS
= f(V
); conditions: V
j
Gate-Source Voltage, VGS (V)
); conditions: I
Drain-Source Voltage, VDS (V)
Junction Temperature, Tj (C)
GS)
50
-1.0
; conditions: T
75
minimum
typical
GS
D
= 1 mA; V
= 0 V; f = 1 MHz
-10.0
100
Product specification
j
VDS = -5 V
= 25 ˚C
Tj = 25 C
iss
Coss
Crss
Ciss
, C
BSH205
125
DS
oss
BSH205
BSH205
, C
= V
0
Rev 1.000
-100.0
rss
GS
150
.