HUF75652G3 Fairchild Semiconductor, HUF75652G3 Datasheet - Page 5

MOSFET N-CH 100V 75A TO-247

HUF75652G3

Manufacturer Part Number
HUF75652G3
Description
MOSFET N-CH 100V 75A TO-247
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Type
Power MOSFETr
Datasheet

Specifications of HUF75652G3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
475nC @ 20V
Input Capacitance (ciss) @ Vds
7585pF @ 25V
Power - Max
515W
Mounting Type
Through Hole
Package / Case
TO-247-3
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.008Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
75A
Power Dissipation
515W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF75652G3
Manufacturer:
IR
Quantity:
6 000
Part Number:
HUF75652G3
Manufacturer:
Fairchi/ON
Quantity:
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Part Number:
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20 000
©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
1.2
1.1
1.0
0.9
-80
I
D
VOLTAGE vs JUNCTION TEMPERATURE
= 250 A
-40
T
J
, JUNCTION TEMPERATURE (
0
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
40
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
80
10
8
6
4
2
0
0
(Continued)
120
V
DD
o
C)
= 50V
160
160
50
200
Q
g
, GATE CHARGE (nC)
100
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
150
WAVEFORMS IN
DESCENDING ORDER:
20000
10000
1000
100
I
I
D
D
0.1
= 75A
= 35A
C
V
200
RSS
GS
= 0V, f = 1MHz
C
V
GD
DS
, DRAIN TO SOURCE VOLTAGE (V)
250
1.0
C
OSS
C
DS
+ C
GD
10
C
ISS
HUF75652G3 Rev. B
C
GS
+ C
GD
100

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