FDP047AN08A0 Fairchild Semiconductor, FDP047AN08A0 Datasheet - Page 3

• Manufacturer Part Number: FDP047AN08A0
• Description: MOSFET N-CH 75V 80A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP047AN08A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 138nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0047 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
0
2000
1000
2
1
100
10
50
10
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
-5
25
T
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
50
C
SINGLE PULSE
Temperature
, CASE TEMPERATURE (
Figure 3. Normalized Maximum Transient Thermal Impedance
V
GS
10
= 10V
75
10
-4
-4
100
T
C
Figure 4. Peak Current Capability
= 25°C unless otherwise noted
125
o
C)
10
10
-3
-3
t, RECTANGULAR PULSE DURATION (s)
150
175
t, PULSE WIDTH (s)
Figure 2. Maximum Continuous Drain Current vs
10
10
-2
-2
200
160
120
80
40
0
25
50
Case Temperature
10
10
T
-1
CURRENT LIMITED
BY PACKAGE
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
75
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C1
J
= P
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
100
C
DM
I = I
= 25
x Z
25
o
θJC
10
10
P
C
DM
1
0
0
o
125
/t
C DERATE PEAK
x R
2
175 - T
o
θJC
C)
150
t
1
+ T
t
C
2
150
C
10
10
175
1
1