FDA24N50F Fairchild Semiconductor, FDA24N50F Datasheet - Page 3

• Manufacturer Part Number: FDA24N50F
• Description: MOSFET N-CH 500V 24A TO-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA24N50F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 4310pF @ 25V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 24 A
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA24N50F Rev. B
Typical Performance Characteristics
7500
6000
4500
3000
1500
0.35
0.30
0.25
0.20
0.15
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
0.5
Figure 1. On-Region Characteristics
60
10
1
0
0.1
0.1
0
V
GS
=
10.0V
15.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
Drain Current and Gate Voltage
V
DS
DS
20
, Drain-Source Voltage [V]
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
V
GS
40
= 10V
1
*Notes:
1. 250
2. T
C
C
C
*Note: T
iss
oss
rss
C
V
= 25
GS

(
s Pulse Test
C ds = shorted
60
*Note:
= 20V
o
1. V
2. f = 1MHz
C
10
J
= 25
GS
= 0V
o
C
)
10
80
30
3
100
150
100
10
10
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
10
Figure 6. Gate Charge Characteristics
1
8
6
4
2
0
1
0.2
4
0
V
SD
, Body Diode Forward Voltage [V]
150
V
Variation vs. Source Current
and Temperature
Q
5
GS
20
g
o
, Total Gate Charge [nC]
C
,Gate-Source Voltage[V]
150
0.6
o
C
V
V
V
DS
DS
DS
6
= 100V
= 250V
= 400V
25
*Notes:
40
-55
o
1. V
2. 250
25
C
*Notes:
1. V
2. 250
o
o
C
*Note: I
DS
C
1.0
GS

= 20V
s Pulse Test

= 0V
7
s Pulse Test
D
= 24A
60
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