FDP047N08 Fairchild Semiconductor, FDP047N08 Datasheet - Page 3

• Manufacturer Part Number: FDP047N08
• Description: MOSFET N-CH 75V 164A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP047N08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 164A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 9415pF @ 25V
• Power - Max: 268W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0047 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 164 A
• Power Dissipation: 268000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP047N08 Rev. A
Typical Performance Characteristics
12000
0.006
0.005
0.004
0.003
0.002
500
100
Figure 5. Capacitance Characteristics
8000
4000
Figure 3. On-Resistance Variation vs.
10
Figure 1. On-Region Characteristics
0.002
1
0
0.1
0
V
GS
C
=
C
C
oss
10.0V
rss
15.0V
iss
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
0.01
V
Drain Current and Gate Voltage
V
DS
DS
,Drain-Source Voltage[V]
100
, Drain-Source Voltage [V]
I
D
, Drain Current [A]
1
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
V
0.1
GS
200
*Notes:
= 10V
1. 250
2. T
C
V
*Note: T
GS
= 25
µ
s Pulse Test
= 20V
(
C ds = shorted
300
o
*Note:
C
1. V
2. f = 1MHz
1
10
C
= 25
GS
= 0V
o
C
)
400
30
3
500
100
500
100
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
10
10
Figure 6. Gate Charge Characteristics
10
1
1
8
6
4
2
0
0.2
0
3
*Notes:
1. V
2. 250
V
0.4
DS
20
SD
µ
, Body Diode Forward Voltage [V]
= 20V
s Pulse Test
Variation vs. Source Current
175
and Temperature
V
Q
4
GS
g
o
175
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
C
V
V
V
0.6
40
DS
DS
DS
o
C
= 15V
= 37.5V
= 60V
0.8
60
5
25
o
*Notes:
1. V
2. 250
C
-55
1.0
*Note: I
80
o
GS
C
µ
= 0V
25
s Pulse Test
6
o
D
C
100
1.2
= 80A
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