NDP7060 Fairchild Semiconductor, NDP7060 Datasheet - Page 5

• Manufacturer Part Number: NDP7060
• Description: MOSFET N-CH 60V 75A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of NDP7060

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 115nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
V
5 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
GS
5 0 0
3 0 0
2 0 0
1.15
1.05
0.95
Figure 11. Switching Test Circuit
Figure 9. Capacitance Characteristics
1.1
0.9
Figure 7. Breakdown Voltage Variation with
1
1
-50
I
R
D
-25
Temperature
f = 1 MHz
V
GEN
= 2 5 0 µ A
GS
2
= 0V
V
0
DS
T
J
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (°C)
2 5
IN
G
5
5 0
D
S
V
7 5
1 0
DD
R
100
L
(continued)
2 0
DUT
125
3 0
C iss
150
C oss
V
C rss
O U T
175
6 0
V
t
V
O U T
d(on)
IN
0.001
2 0
1 5
1 0
Figure 12. Switching Waveforms
Figure 10. Gate Charge Characteristics
Figure 8. Body Diode Forward Voltage
1 0 %
0.01
5
0
1 0 0
0.1
5 0
1 0
0
1
0.2
I
D
Variation with Current and Temperature
T = 125°C
V
J
= 75A
t
GS
5 0 %
o n
2 5
1 0 %
0.4
= 0V
V
SD
t
9 0 %
PULSE W IDTH
, BODY DIODE FORWARD VOLTAGE (V)
r
5 0
Q
0.6
g
, GATE CHARGE (nC)
25°C
t
d(off)
7 5
0.8
5 0 %
-55°C
1 0 0
9 0 %
1
t
1 0 %
o f f
V
9 0 %
DS
= 12V
1 2 5
INVERTED
1.2
t
f
NDP7060.SAM
24V
48V
1.4
1 5 0