FCP11N60N Fairchild Semiconductor, FCP11N60N Datasheet

MOSFET N-CH 600V 10.8A TO220

FCP11N60N

Manufacturer Part Number
FCP11N60N
Description
MOSFET N-CH 600V 10.8A TO220
Manufacturer
Fairchild Semiconductor
Series
SuperMOS™r
Datasheet

Specifications of FCP11N60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35.6nC @ 10V
Input Capacitance (ciss) @ Vds
1505pF @ 100V
Power - Max
94W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.255 Ohms at 10 V
Forward Transconductance Gfs (max / Min)
13.5 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
6.8 A to 10.8 A
Power Dissipation
94 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCP11N60N
Manufacturer:
FUJI
Quantity:
20 000
Company:
Part Number:
FCP11N60N
Quantity:
41
©2009 Fairchild Semiconductor Corporation
FCP11N60N / FCPF11N60NT Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FCP11N60N / FCPF11N60NT
N-Channel MOSFET
600V, 10.8A, 0.299Ω
Features
• R
• Ultra Low Gate Charge ( Typ. Qg = 27.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
= 0.255Ω ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
G D S
GS
TO-220
FCP Series
= 10V, I
D
T
= 5.4A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
G
D
o
S
C)
C
C
= 25
= 100
1
o
C
TO-220F
FCPF Series
o
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
FCP11N60N FCPF11N60NT
FCP11N60N FCPF11N60NT
G
10.8
32.4
94.0
0.75
1.33
62.5
6.8
0.5
-55 to +150
201.7
0.94
600
±30
100
300
3.7
20
SupreMOS
S
D
10.8*
32.4*
32.1
0.26
62.5
6.8*
3.9
0.5
August 2009
www.fairchildsemi.com
Units
W/
Units
o
V/ns
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
tm
TM

Related parts for FCP11N60N

FCP11N60N Summary of contents

Page 1

... Thermal Resistance, Case to Heat Sink (Typical) θCS R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. A Description = 5.4A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 3.7A 25Ω, Starting T = 25° ≤ 10.8A, di/dt ≤ 200A/μ 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCP11N60N / FCPF11N60NT Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 1mA, V ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 C iss = oss = rss = oss 4000 2000 C iss C rss 0 0 Drain-Source Voltage [V] DS FCP11N60N / FCPF11N60NT Rev. A Figure 2. Transfer Characteristics 60 10 *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 10V 20V GS o *Notes: T ...

Page 4

... DS(on) *Notes: 0 Single Pulse 0.01 0 Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FCP11N60N / FCPF11N60NT Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 1mA D 0.0 -100 100 150 200 Figure 10. Maximum Safe Operating Area 100 20 μ ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve _ FCP11N60N 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. Figure 13. Transient Thermal Response Curve _ FCPF11N60NT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FCP11N60N / FCPF11N60NT Rev. A (Continued Rectangular Pulse Duration [sec] ...

Page 6

... FCP11N60N / FCPF11N60NT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FCP11N60N / FCPF11N60NT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FCP11N60N / FCPF11N60NT Rev. A TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions FCP11N60N / FCPF11N60NT Rev. A TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCP11N60N / FCPF11N60NT Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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