FCP11N60 Fairchild Semiconductor, FCP11N60 Datasheet - Page 2

• Manufacturer Part Number: FCP11N60
• Description: MOSFET N-CH 600V 11A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCP11N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1490pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 9.7 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCP11N60_NL; FCP11N60_NL

©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
3. I
4. Pulse Test : Pulse width
5. Essentially independent of operating temperature
Off Characteristics
BV
/
BV
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
AS
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
g
gs
gd
rr
DSS
DS
= 5.5A, V
DSS
11A, di/dt
eff.
T
J
DD
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coef-
ficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 50V, R
200A/ s, V
G
300 s, Duty cycle
= 25
DD
Parameter
BV
Starting T
DSS,
Starting T
J
= 25°C
2%
J
= 25°C
T
C
= 25°C unless otherwise noted
V
V
I
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
f = 1.0 MHz
V
V
R
V
V
V
V
dI
D
GS
GS
GS
DS
DS
GS
GS
DS
GS
DS
DS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= 0 V, I
= 0 V, I
= 0 V, I
= 600 V, V
= 480 V, T
= 30 V, V
= -30 V, V
= V
= 10 V, I
= 40 V, I
= 25 V, V
= 480 V, V
= 0V to 480 V, V
= 300 V, I
= 480 V, I
= 10 V
= 0 V, I
= 0 V, I
GS
Test Conditions
, I
D
D
D
S
S
D
D
D
= 250 A, T
= 11 A
= 11 A,
= 250 A, T
= 11 A
DS
GS
D
D
= 250 A
DS
= 5.5 A
C
= 5.5 A
GS
GS
= 11 A,
= 11 A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
= 0 V,
GS
= 0 V
J
J
= 150°C
(Note 4, 5)
(Note 4, 5)
= 25°C
(Note 4)
(Note 4)
Min
600
3.0
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1148
0.32
Typ
650
700
671
119
390
0.6
9.7
7.2
5.7
63
35
95
34
98
56
40
21
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1490
Max
-100
0.38
100
870
205
250
120
5.0
1.4
10
82
80
52
33
11
Rev. B1, December 2008
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Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
S
A
A
V
A
A
C