HUFA75343G3 Fairchild Semiconductor, HUFA75343G3 Datasheet

MOSFET N-CH 55V 75A TO-247

HUFA75343G3

Manufacturer Part Number
HUFA75343G3
Description
MOSFET N-CH 55V 75A TO-247
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUFA75343G3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
205nC @ 20V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
270W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUFA75343G3
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2001 Fairchild Semiconductor Corporation
75A, 55V, 0.009 Ohm, N-Channel UltraFET
Power MOSFETs
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery operated products.
Formerly developmental type TA75343.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75343S3ST.
Packaging
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
HUFA75343G3
HUFA75343P3
HUFA75343S3S
PART NUMBER
DRAIN
(TAB)
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-263AB
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
PACKAGE
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Data Sheet
HUFA75343G3, HUFA75343P3, HUFA75343S3S
SOURCE
75343G
75343P
75343S
DRAIN
SOURCE
BRAND
GATE
GATE
JEDEC TO-263AB
Features
• 75A, 55V
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- Temperature Compensating PSPICE® and SABER™
- Thermal Impedance PSPICE™ and SABER Models
- TB334, “Guidelines for Soldering Surface Mount
(FLANGE)
Models
Available on the WEB at: www.fairchildsemi.com
Components to PC Boards”
DRAIN
December 2001
(FLANGE)
DRAIN
JEDEC TO-220AB
HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B
G
D
S
SOURCE
DRAIN
GATE

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HUFA75343G3 Summary of contents

Page 1

... UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND 75343G 75343P 75343S SOURCE DRAIN GATE JEDEC TO-263AB DRAIN GATE (FLANGE) SOURCE JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B ...

Page 2

... GS (Figure 13 DSS 55 DGR Figure 4 DM Figure 6 AS 270 D 1. -55 to 175 J STG 300 L 260 pkg MIN TYP 150 0.007 - - - - - - - - - 30V, - 170 DD 75A 0 1.0mA g(REF HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B UNITS MAX UNITS - 250 A 100 0.009 o 0. C/W 125 205 nC 110 nC 7 ...

Page 3

... C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION (s) MIN TYP - 3000 - 1100 - 230 MIN TYP - - - - - - 100 125 CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B MAX UNITS - MAX UNITS 1.25 V 100 ns 200 nC 150 175 ...

Page 4

... 150 - (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED DSS STARTING T o STARTING T = 150 C J 0.01 0 TIME IN AVALANCHE (ms 15V DD PULSE DURATION = 80 s -55 DUTY CYCLE = 0.5% MAX 1.5 3.0 4 GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev + 175 C 6.0 7.5 ...

Page 5

... FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE WAVEFORMS IN DESCENDING ORDER 30V GATE CHARGE (nC 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 75A 47A 18A D 80 100 HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev 250 120 160 200 0V 1MHz ISS RSS OSS ...

Page 6

... FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORM d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP RGATE - + RLGATE S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 RDBREAK 51 72 RDBODY ISCL DBREAK 50 71 RDRAIN MWEAK 8 DBODY EBREAK MMED + MSTRO 17 18 LSOURCE - CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP VBAT RVTHRES HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B DRAIN 2 SOURCE 3 ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUFA75343G3, HUFA75343P3, HUFA75343S3S Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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