FDPF5N50NZ Fairchild Semiconductor, FDPF5N50NZ Datasheet - Page 4
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FDPF5N50NZ
Manufacturer Part Number
FDPF5N50NZ
Description
MOSFET N-CH 500V 4.5A TO220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet
1.FDP5N50NZ.pdf
(10 pages)
Specifications of FDPF5N50NZ
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.25A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.38 Ohms
Forward Transconductance Gfs (max / Min)
3.54 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
4.5 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
9 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF5N50NZ
Manufacturer:
Fairchi/ON
Quantity:
17 398
Part Number:
FDPF5N50NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDPF5N50NZF
Manufacturer:
Fairchi/ON
Quantity:
17 401
Part Number:
FDPF5N50NZF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDPF5N50NZU
Manufacturer:
Fairchi/ON
Quantity:
17 402
FDP5N50NZ / FDPF5N50NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Maximum Drain Current
0.01
0.1
5
4
3
2
1
0
30
10
1.2
1.1
1.0
0.9
0.8
25
1
-100
1
Operation in This Area
is Limited by R
vs. Case Temperature-FDP5N50NZ
vs. Temperature
50
T
-50
V
C
T
, Case Temperature [
DS
J
, Junction Temperature
, Drain-Source Voltage [V]
10
DS(on)
75
*Notes:
0
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
100
DC
o
50
o
C
10ms
100
C
o
1ms
C]
*Notes:
100
125
1. V
2. I
[
o
100
C
D
s
GS
]
= 250
= 0V
1000
150
A
150
(Continued)
4
Figure 10. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.1
-100
30
10
1
1
Operation in This Area
is Limited by R
vs. Case Temperature-FDPF5N50NZ
-50
vs. Temperature
T
J
, Junction Temperature
V
DS
, Drain-Source Voltage [V]
10
DS(on)
0
*Notes:
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
DC
50
o
10ms
o
C
100
C
1ms
*Notes:
[
1. V
2. I
o
100us
100
C
D
]
GS
= 2.25A
www.fairchildsemi.com
= 10V
1000
150