FCB11N60TM Fairchild Semiconductor, FCB11N60TM Datasheet

FCB11N60TM

Manufacturer Part Number

FCB11N60TM

Description

MOSFET N-CH 600V 11A D2PAK

Manufacturer

Fairchild Semiconductor

Series

SuperFET™r

Type

Power MOSFETr

Datasheet

1.FCB11N60TM.pdf (8 pages)

Specifications of FCB11N60TM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

380 mOhm @ 5.5A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

11A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

52nC @ 10V

Input Capacitance (ciss) @ Vds

1490pF @ 25V

Power - Max

125W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.38 Ohms

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

11 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.38Ohm

Drain-source On-volt

600V

Gate-source Voltage (max)

±30V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

D2PAK

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FCB11N60TMTR
FCB11N60TM_NL
FCB11N60TM_NLTR
FCB11N60TM_NLTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

FCB11N60TM

Quantity:

3 375

Current page: 1 of 8
Download datasheet (972Kb)

FCB11N60 Rev. A1

FCB11N60

600V N-Channel MOSFET

Features

• 650V @T

• Typ. R

• Ultra low gate charge (typ. Q

• Low effective output capacitance (typ. C

• 100% avalanche tested

Absolute Maximum Ratings

Thermal Characteristics

* When mounted on the minimum pad size recommended (PCB Mount)

dv/dt

DSS

GSS

Symbol

θJC

θJA

STG

DS(on)

= 150°C

= 0.32Ω

Drain-Source Voltage

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

Operating and Storage Temperature Range

= 40nC)

- Continuous (T

- Pulsed

- Derate above 25°C

Parameter

oss

= 25°C)

.eff = 95pF)

= 25°C)

= 100°C)

Description

SuperFET

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize con-

duction loss, provide superior switching performance, and with-

stand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system min-

iaturization and higher efficiency.

(Note 1)

(Note 2)

(Note 1)

(Note 3)

is, Farichild’s proprietary, new generation of high

FCB11N60

-55 to +150

FCB11N60

± 30

12.5

600

340

125

300

4.5

1.0

SuperFET

62.5

1.0

www.fairchildsemi.com

Unit

W/°C

V/ns

Unit

°C/W

July 2005

°C

Related parts for FCB11N60TM

FCB11N60TM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient* θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation FCB11N60 Rev. A1 Description SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. ...

Page 2

Package Marking and Ordering Information Device Marking Device FCB11N60 FCB11N60 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS / ∆T Coefficient J BV Drain-Source Avalanche Breakdown DS Voltage I Zero Gate Voltage ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 15.0 V 10.0 V 8.0 V 7 6.0 V Bottom : 5 ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area 2 10 Operation in This Area is Limited by ...

Page 5

3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ...

Page 6

Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FCB11N60 Rev. A1 Peak Diode Recovery ...

Page 7

Mechanical Dimensions 9.90 ±0.10 1.27 2.54 TYP 10.00 FCB11N60 Rev -PAK 2 ±0.20 ±0.10 0.80 2.54 TYP ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 ±0.15 0.10 ±0.20 2.40 +0.10 0.50 –0.05 ±0.20 10.00 (8.00) (4.40) (2XR0.45) ±0.10 0.80 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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