FDP5N50NZ Fairchild Semiconductor, FDP5N50NZ Datasheet - Page 9

• Manufacturer Part Number: FDP5N50NZ
• Description: MOSFET N-CH 500V 4.5A TO220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDP5N50NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 78W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.38 Ohms
• Forward Transconductance Gfs (max / Min): 3.54 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 78 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package Dimensions
TO-220F
* Front/Back Side Isolation Voltage : AC2500V
Dimensions in Millimeters
www.fairchildsemi.com
FDP5N50NZ / FDPF5N50NZ Rev. A
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