FQP50N06 Fairchild Semiconductor, FQP50N06 Datasheet - Page 2

• Manufacturer Part Number: FQP50N06
• Description: MOSFET N-CH 60V 50A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP50N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 1540pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 50 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 65 ns
• Rise Time: 105 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 230 H, I
3. I
4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ 50A, di/dt ≤ 300A/ s, V
T
DSS
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 50A, V
DD
= 25V, R
DD
Parameter
≤ BV
G
= 25
DSS,
Starting T
Starting T
J
J
= 25°C
T
= 25°C
C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= 10 V, I
= 60 V, V
= 48 V, T
= V
= 25 V, I
= 25 V, V
= 48 V, I
= 0 V, I
= 25 V, V
= -25 V, V
= 30 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
D
S
S
D
D
D
D
= 25 A
= 250 A
C
= 50 A
= 50 A,
GS
GS
DS
= 250 A
DS
= 25 A
= 50 A,
= 25 A,
= 150°C
= 0 V
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
2.0
60
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0.018
1180
0.06
Typ
440
105
22
65
15
60
65
31
13
52
75
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8
0.022
1540
-100
Max
100
580
220
130
140
200
4.0
1.5
10
90
40
41
50
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1
Rev. A2, March 2003
Units
V/°C
nA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A