FQP13N50 Fairchild Semiconductor, FQP13N50 Datasheet

MOSFET N-CH 500V 12.5A TO-220

FQP13N50

Manufacturer Part Number
FQP13N50
Description
MOSFET N-CH 500V 12.5A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQP13N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 6.25A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2300pF @ 25V
Power - Max
170W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.43 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12.5 A
Power Dissipation
170 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQP13N50
Manufacturer:
FAIRCHILD
Quantity:
1 550
Part Number:
FQP13N50
Manufacturer:
FSC
Quantity:
25
Part Number:
FQP13N50
Manufacturer:
TOSHIBA
Quantity:
5 000
Part Number:
FQP13N50
Manufacturer:
Fairchi/ON
Quantity:
17 449
Part Number:
FQP13N50
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
FQP13N50C
Manufacturer:
FSC
Quantity:
305 000
Part Number:
FQP13N50C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FQP13N50C
Quantity:
4 000
Company:
Part Number:
FQP13N50C
Quantity:
9 000
©2002 Fairchild Semiconductor Corporation
FQP13N50/FQPF13N50
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
TO-220
FQP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
Parameter
= 25°C)
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 12.5A, 500V, R
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
FQPF Series
FQP13N50
FQP13N50
12.5
1.35
0.74
170
7.9
0.5
50
DS(on)
-55 to +150
= 0.43
12.5
500
810
300
4.5
17
30
FQPF13N50
FQPF13N50
G
! ! ! !
! ! ! !
12.5 *
@V
7.9 *
0.45
2.23
50 *
56
--
QFET
GS
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
= 10 V
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. B, September 2002
Units
Units
W/°C
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQP13N50

FQP13N50 Summary of contents

Page 1

... S FQP13N50 FQPF13N50 Units 500 V 12.5 12 7.9 7 810 mJ 12 4.5 V/ns 170 56 W 1.35 0.45 W/°C -55 to +150 °C 300 °C FQP13N50 FQPF13N50 Units 0.74 2.23 °C/W 0.5 -- °C/W Rev. B, September 2002 TM ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 9.3mH 12.5A 50V ≤ 13.4A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 500 ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3500 3000 C 2500 iss C 2000 oss 1500 1000 C rss 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2002 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics V = 10V 20V ※ ...

Page 4

... DS(on ※ Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for FQP13N50 Case Temperature [ ℃ Figure 10. Maximum Drain Current vs. Case Temperature ©2002 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0 ...

Page 5

... Typical Characteristics ©2002 Fairchild Semiconductor Corporation (Continued) ※ Figure 11-1. Transient Thermal Response Curve for FQP13N50 ※ Figure 11. Transient Thermal Response Curve for FQPF13N50 ( ℃ θ θ ℃ θ θ Rev. B, September 2002 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2002 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2002 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2002 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. B, September 2002 ...

Page 9

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2002 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. B, September 2002 ...

Page 10

CROSSVOLT â â â â â Rev. I2 ...

Related keywords