SFF9250L Fairchild Semiconductor, SFF9250L Datasheet

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SFF9250L

Manufacturer Part Number
SFF9250L
Description
MOSFET P-CH 200V 12.6A TO-3PF
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SFF9250L

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
230 mOhm @ 6.3A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
12.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 5V
Input Capacitance (ciss) @ Vds
3250pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-3PF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
T
Symbol
Symbol
Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitances
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10uA (Max.) @ V
Lower R
J
R
R
dv/dt
V
V
E
E
I
I
P
, T
I
T
θJC
DM
θJA
AR
DSS
D
GS
AR
AS
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8″ from case for 5-seconds
: 0.175
Junction-to-Ambient
Junction-to-Case
(Typ.)
Characteristic
Characteristic
C
=25 C)
C
C
DS
=25 C)
=100 C)
=-200V
Typ.
--
--
- 55 to +150
Value
-12.6
-50.4
-12.6
300
-200
±20
20.4
0.72
-7.9
990
-5.0
BV
R
I
90
D
TO-3PF
1.Gate 2. Drain 3. Source
DS(on)
SFF9250L
= -12.6 A
DSS
1
2
3
Max.
0.61
40
= 0.23
= -200 V
Units
Units
W/ C
V/ns
C /W
mJ
mJ
W
V
A
A
V
A
C
Rev. A

Related parts for SFF9250L

SFF9250L Summary of contents

Page 1

... T L Purposes, 1/8″ from case for 5-seconds Thermal Resistance Symbol R Junction-to-Case θJC R Junction-to-Ambient θJA =-200V DS Characteristic = =100 C) C ① ② ① ① ③ = Characteristic SFF9250L BV = -200 V DSS R = 0.23 DS(on -12 TO-3PF 1.Gate 2. Drain 3. Source Value Units -200 V -12.6 A -7.9 -50.4 A ±20 V ...

Page 2

... SFF9250L Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS ΔBV/ΔT Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss ...

Page 3

... Note : T = 25℃ 100 0.6 Fig 6. Gate Charge vs. Gate-Source Voltage = shorted ※ Note ; MHz SFF9250L -55 ℃ ※ Note -40V DS 2. 250μ s Pulse Test Gate-Source Voltage [ ℃ ※ Note : 250μ s Pulse Test 1.2 1.8 2.4 3.0 3 Source-Drain Voltage [ -40V -100V DS V ...

Page 4

... SFF9250L Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - 100 T , Junction Temperature [ J Fig 9. Max. Safe Operating Area Operation in This Area is Limited by R DS(on ※ Notes : 150 Single Pulse - Drain-Source Voltage [ Fig 8. On-Resistance vs. Temperature 2.5 2.0 1.5 1.0 ※ Note : 1 ...

Page 5

... Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF V GS -3mA Fig 13. Resistive Switching Test Circuit & Waveforms -5V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms - Same Type as DUT - DUT 0.5 rated 10% DUT DUT DSS SFF9250L Charge off d(on) r d(off) 90 DSS ---- 2 -------------------- DSS DD Time ( (t) D ...

Page 6

... SFF9250L Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Compliment of DUT (N-Channel) • dv/dt controlled • I controlled by pulse period S Gate Pulse Width -------------------------- D = Gate Pulse Period I , Body Diode Forward Current Body Diode Reverse Current Body Diode Recovery dv/dt ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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