FQI27N25TU Fairchild Semiconductor, FQI27N25TU Datasheet
FQI27N25TU
Manufacturer Part Number
FQI27N25TU
Description
MOSFET N-CH 250V 25.5A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQI27N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 12.75A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
25.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
2450pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
25.5 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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FQI27N25TU Summary of contents
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D - PAK Dimensions in Millimeters ...
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