FDS4675 Fairchild Semiconductor, FDS4675 Datasheet - Page 3

• Manufacturer Part Number: FDS4675
• Description: MOSFET P-CH 40V 11A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4675

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4350pF @ 20V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4675; FDS4675TR

Typical Characteristics
50
40
30
20
10
50
40
30
20
10
0
0
0
1
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation with
V
1
V
Figure 1. On-Region Characteristics.
GS
-4.5V
-50
DS
Figure 5. Transfer Characteristics.
-6.0V
= -10V
= -5.0V
V
I
D
G S
0.5
= -11A
-25
= -10V
1.5
-V
-V
-3.5V
-3.0V
DS
GS
, DRAIN TO SOURCE VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
0
J
Temperature.
, JUNCTION TEMPERATURE (
1
2
25
1.5
50
-2.5V
T
2.5
A
= -55
75
2
o
C
100
o
C)
125
3
2.5
o
C
25
125
o
C
3.5
150
3
Figure 6. Body Diode Forward Voltage Variation
0.05
0.04
0.03
0.02
0.01
0.0001
0.001
2.2
1.8
1.6
1.4
1.2
0.8
0.01
0
100
0.1
with Source Current and Temperature.
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
2
1
10
2
1
0
0
Drain Current and Gate Voltage.
V
V
T
GS
GS
A
= 25
= 0V
= -3.0V
2.5
0.2
Gate-to-Source Voltage.
T
-V
A
10
o
C
-V
= 125
SD
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0.4
-3.5V
o
C
-I
3
D
, DIRAIN CURRENT (A)
20
-4.0V
25
T
0.6
o
A
C
= 125
3.5
-4.5V
o
-55
C
0.8
30
o
C
-6.0V
4
1
I
D
40
= -5.5A
FDS4675 Rev C(W)
4.5
-10V
1.2
50
1.4
5