FQA9P25 Fairchild Semiconductor, FQA9P25 Datasheet - Page 4

MOSFET P-CH 250V 10.5A TO-3P

FQA9P25

Manufacturer Part Number
FQA9P25
Description
MOSFET P-CH 250V 10.5A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA9P25

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
620 mOhm @ 5.25A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
10.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.62 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
6.1 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10.5 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA9P25
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQA9P25
Manufacturer:
FSC
Quantity:
86 755
©2000 Fairchild Semiconductor International
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
1 0
1 0
※ Notes :
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
- 2
1 0
0
C
J
= 150
= 25
- 5
D = 0 . 5
0 .0 2
0 .0 1
o
0 .0 5
C
o
0 .2
0 .1
50
C
DS(on)
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
s in g le p u ls e
1 0
(Continued)
o
1 ms
- 4
C]
10
※ Notes :
1. V
2. I
t
2
1
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
150
= 0 V
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
10
8
6
4
2
0
-100
25
※ N o te s :
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
- 1
θ J C
J M
P
-50
DM
- T
( t ) = 0 . 8 3 ℃ /W M a x .
50
C
= P
vs. Case Temperature
T
D M
vs. Temperature
J
T
t
, Junction Temperature [
1
C
* Z
t
0
, Case Temperature [ ℃ ]
1 0
2
1
/t
θ J C
0
75
2
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -4.7 A
= -10 V
Rev. A2, December 2000
200
150

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