FQP6N80 Fairchild Semiconductor, FQP6N80 Datasheet - Page 4

• Manufacturer Part Number: FQP6N80
• Description: MOSFET N-CH 800V 5.8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP6N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.8A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 1.95ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.95 Ohms
• Forward Transconductance Gfs (max / Min): 5.9 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
10
J
vs Temperature
DS
, Junction Temperature [
1
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
※ Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
0
1 0
C
J
= 150
= 25
- 5
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
0 .2
0 .1
DS(on)
o
50
C
o
C
DC
10
10 ms
Figure 11. Transient Thermal Response Curve
2
100
1 0
(Continued)
1 ms
o
- 4
C]
s i n g le p u ls e
100μ s
※ Notes :
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
10μ s
= 250 μ A
150
= 0 V
10
3
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
1 . Z
2 . D u ty F a c to r , D = t
3 . T
1 0
Figure 10. Maximum Drain Current
- 1
P
θ J C
J M
-50
DM
- T
( t) = 0 .7 9 ℃ / W M a x .
50
C
= P
vs Case Temperature
T
J
T
D M
t
vs Temperature
, Junction Temperature [
1
C
t
1 0
0
, Case Temperature [ ℃ ]
2
* Z
0
1
/t
θ J C
75
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 2.9 A
= 10 V
Rev. A, September 2000
200
150