FQPF8N80C Fairchild Semiconductor, FQPF8N80C Datasheet

MOSFET N-CH 800V 8A TO-220F

FQPF8N80C

Manufacturer Part Number
FQPF8N80C
Description
MOSFET N-CH 800V 8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Type
Power MOSFETr
Datasheet

Specifications of FQPF8N80C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.55 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
2050pF @ 25V
Power - Max
59W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.55 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
5.6 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
59000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
1.55Ohm
Drain-source On-volt
800V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company:
Part Number:
FQPF8N80CYDTU
Quantity:
4 500
©2009 Fairchild Semiconductor Corporation
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 8A, 800V, R
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
1
TO-220F
FQPF Series
FQP8N80C
FQP8N80C
DS(on)
1.43
62.5
178
5.1
0.7
0.5
32
8
= 1.55
-55 to +150
17.8
800
850
300
4.5
8
30
FQPF8N80C
FQPF8N80C
@V
G
! ! ! !
! ! ! !
GS
5.1 *
0.48
62.5
32 *
2.1
8 *
59
--
= 10 V
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
January 2009
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
QFET
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
www.fairchildsemi.com
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQPF8N80C Summary of contents

Page 1

... JC R Thermal Resistance, Case-to-Sink Typ Thermal Resistance, Junction-to-Ambient JA ©2009 Fairchild Semiconductor Corporation FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A Features • 8A, 800V, R • Low gate charge ( typical 35 nC) • Low Crss ( typical 13 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 25mH 8A 50V Starting ≤ 8A, di/dt ≤ 200A ≤ BV Starting DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 800 ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2500 C 2000 iss 1500 C oss 1000 C 500 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics ※ Note : T = 25℃ ...

Page 4

... C] Figure 8. On-Resistance Variation 100 Figure 9-2. Maximum Safe Operating Area 100 125 150 4 ※ Notes : 4 - 100 150 200 Junction Temperature [ Temperature Operation in This Area is Limited by R DS(on 100 ※ Notes : 150 Single Pulse Drain-Source Voltage [V] DS for FQPF8N80C www.fairchildsemi.com ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP8N80C Figure 11-2. Transient Thermal Response Curve for FQPF8N80C FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A (Continued) ※ θ tio ※ tio ℃ θ ( ℃ θ ( θ www.fairchildsemi.com ...

Page 6

... FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 7

... FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 9

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 8 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 9 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters www.fairchildsemi.com ...

Page 11

... FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev.A 10 www.fairchildsemi.com ...

Page 12

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQP8N80C/FQPF8N80C/FQPF8N80CYDTU Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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