FDB12N50TM Fairchild Semiconductor, FDB12N50TM Datasheet - Page 3

• Manufacturer Part Number: FDB12N50TM
• Description: MOSFET N-CH 500V 11.5A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDB12N50TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1315pF @ 25V
• Power - Max: 165W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 165000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB12N50TMTR

FDB12N50TM Rev. A1
Typical Performance Characteristics
2000
1500
1000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
500
Figure 1. On-Region Characteristics
30
1.4
1.2
1.0
0.8
0.6
0.4
10
1
0
0.1
1
0
V
GS
=
15.0 V
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
Drain Current and Gate Voltage
V
DS
5
DS
C
C
C
oss
iss
, Drain-Source Voltage [V]
,Drain-Source Voltage[V]
rss
I
D
, Drain Current [A]
10
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
V
GS
*Notes:
= 10V
1. 250
2. T
15
*Note: T
C
V
= 25
μ
GS
(
C ds = shorted
s Pulse Test
*Note:
10
= 20V
o
1. V
2. f = 1MHz
C
20
10
J
= 25
GS
= 0V
o
C
)
20
30
25
3
100
0.1
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
10
40
10
10
Figure 6. Gate Charge Characteristics
1
8
6
4
2
0
1
0.3
4
0
V
SD
0.6
5
150
, Body Diode Forward Voltage [V]
Variation vs. Source Current
and Temperature
V
Q
GS
o
150
g
V
V
V
C
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
DS
DS
DS
6
o
= 100V
= 250V
= 400V
C
0.9
10
25
25
o
C
o
C
*Notes:
1.2
15
1. V
2. 250
-55
*Notes:
1. V
2. 250
*Note: I
o
DS
8
C
GS
μ
= 20V
s Pulse Test
μ
= 0V
s Pulse Test
1.5
20
D
= 11.5A
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1.8
25
10