RFD14N05SM Fairchild Semiconductor, RFD14N05SM Datasheet - Page 4

• Manufacturer Part Number: RFD14N05SM
• Description: MOSFET N-CH 50V 14A TO-252AA
• Manufacturer: Fairchild Semiconductor

Specifications of RFD14N05SM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 20V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
50
10
35
30
25
20
15
10
1
0.01
0.5
5
0
2.0
1.5
1.0
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
If R = 0
t
If R ≠ 0
t
0
AV
0
AV
STARTING T
-80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
V
FIGURE 8. TRANSFER CHARACTERISTICS
= (L/R)ln[(I
= (L)(I
DD
GS
= 15V
= V
JUNCTION TEMPERATURE
AS
-40
DS
)/(1.3*RATED BV
2
V
J
, I
AS
GS
T
= 150
D
t
J
*R)/(1.3*RATED BV
AV
, GATE TO SOURCE VOLTAGE (V)
= 250µA
, JUNCTION TEMPERATURE (
, TIME IN AVALANCHE (ms)
0.1
0
o
C
4
40
DSS
- V
STARTING T
DSS
80
DD
-55
6
-V
)
o
DD
C
1
Unless Otherwise Specified (Continued)
) +1]
120
J
o
= 25
C)
-25
8
o
o
160
C
C
175
o
C
200
10
10
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
2.0
1.5
1.0
0.5
0
0
-80
V
0
-80
GS
FIGURE 7. SATURATION CHARACTERISTICS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
I
D
GS
= 20V
= 250µA
= 10V, ID = 14A
VOLTAGE vs JUNCTION TEMPERATURE
RESISTANCE vs JUNCTION TEMPERATURE
-40
-40
V
DS
T
T
2
J
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
40
RFD14N05, RFD14N05SM, RFP14N05 Rev. B
40
V
V
GS
GS
4
= 10V
= 8V
80
80
120
120
o
o
6
C)
C)
V
V
V
V
T
GS
GS
GS
GS
C
160
160
= 25
= 7V
= 6V
= 5V
= 4.5V
o
C
200
200
8