HUF76429S3ST Fairchild Semiconductor, HUF76429S3ST Datasheet - Page 4

• Manufacturer Part Number: HUF76429S3ST
• Description: MOSFET N-CH 60V 47A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF76429S3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 44 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
300
100
50
40
30
20
10
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
10
0
1
40
30
20
10
1.5
1
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
2
FIGURE 7. TRANSFER CHARACTERISTICS
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
SINGLE PULSE
T
T
DD
J
C
I
D
= MAX RATED
= 25
= 15V
= 22A
VOLTAGE AND DRAIN CURRENT
o
C
V
2
V
DS
V
GS
GS
, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
, GATE TO SOURCE VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
I
D
= 44A
T
2.5
J
= 175
10
o
6
C
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
C
3
= 25
T
J
= 25
(Continued)
T
o
C
J
= -55
o
C
8
3.5
o
C
100 s
10ms
1ms
100
10
4
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
10
50
40
30
20
10
2.5
2.0
1.5
1.0
0.5
0.001
0
0
-80
If R = 0
t
If R
t
FIGURE 8. SATURATION CHARACTERISTICS
AV
AV
V
GS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
0
= 10V
CAPABILITY
RESISTANCE vs JUNCTION TEMPERATURE
-40
AS
STARTING T
V
)/(1.3*RATED BV
DS
T
J
AS
1
t
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
AV
*R)/(1.3*RATED BV
0
0.01
, TIME IN AVALANCHE (ms)
V
J
V
GS
GS
= 150
40
= 5V
= 4V
DSS
o
2
C
HUF76429P3, HUF76429S3S Rev. B
- V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
80
C
DD
DSS
= 25
V
STARTING T
V
V
)
GS
0.1
GS
GS
- V
o
120
= 3.5V
C
DD
= 3V
= 10V, I
o
3
) +1]
C)
D
J
160
= 25
= 47A
o
C
200
1
4