FQPF13N50C Fairchild Semiconductor, FQPF13N50C Datasheet - Page 4

• Manufacturer Part Number: FQPF13N50C
• Description: MOSFET N-CH 500V 13A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF13N50C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
14
12
10
1.2
1.1
1.0
0.9
0.8
10
10
10
10
8
6
4
2
0
-100
25
-1
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
Figure 10. Maximum Drain Current
-50
50
vs Case Temperature
T
vs Temperature
V
T
J
for FQP13N50C
, Junction Temperature [
10
C
DS
, Case Temperature [ ℃ ]
0
1
, Drain-Source Voltage [V]
※ Notes :
Operation in This Area
is Limited by R
1. T
2. T
3. Single Pulse
75
C
J
= 150
= 25
DC
o
C
o
50
C
DS(on)
100 ms
100
10 ms
10
(Continued)
100
2
1 ms
o
C]
※ Notes :
100 s
1. V
2. I
125
D
G S
= 250 μ A
= 0 V
150
10 s
10
150
3
200
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
-100
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
for FQPF13N50C
V
T
vs Temperature
10
J
DS
, Junction Temperature [
1
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
1. T
2. T
3. Single Pulse
C
J
= 25
= 150
o
C
o
C
DC
50
DS(on)
100 ms
10 ms
10
2
100
o
1 ms
C]
100 s
※ Notes :
1. V
2. I
10 s
150
D
GS
= 6.5 A
= 10 V
10
3
200
Rev. A, April 2003