FQPF9N50CF Fairchild Semiconductor, FQPF9N50CF Datasheet - Page 4

• Manufacturer Part Number: FQPF9N50CF
• Description: MOSFET N-CH 500V 9A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF9N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 44W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 44 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 64 ns
• Rise Time: 65 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQPF9N50CF Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
vs. Temperature
-50
V
DS
10
T
1 0
1 0
1 0
, Drain-Source Voltage [V]
J
1
, Junction Temperature [
Operation in This Area
is Limited by R
- 1
- 2
0
1 0
0
※
1. T
2. T
3. Single Pulse
- 5
Notes :
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
C
J
0 .2
0 .1
= 25
= 150
DC
DS(on)
o
50
100 ms
C
o
C
10 ms
s in g le p u ls e
10
1 0
2
-4
100
1 ms
100
t
o
1
C]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
※
µ
1. V
2. I
Notes :
s
10
D
GS
= 250 µA
150
µ
= 0 V
s
1 0
10
-3
3
200
(Continued)
1 0
4
- 2
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
-100
25
1 0
※
P
- 1
vs. Temperature
1 . Z
2 . D u ty F a c to r , D = t
3 . T
DM
N o te s :
vs. Case Temperature
θ J C
J M
-50
( t) = 2 .8 6
- T
50
t
1
C
t
2
= P
1 0
T
T
D M
J
, Junction Temperature [
C
0
℃
, Case Temperature [ ]
0
* Z
/W M a x .
1
θ J C
75
/t
2
( t)
50
1 0
100
1
100
℃
o
C]
125
※
1. V
2. I
150
Notes :
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D
GS
= 4.5 A
= 10 V
150
200