FDD3670 Fairchild Semiconductor, FDD3670 Datasheet - Page 4

• Manufacturer Part Number: FDD3670
• Description: MOSFET N-CH 100V 34A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD3670

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 32 mOhm @ 7.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2490pF @ 50V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
1000
0.01
8
6
4
2
0
100
0.1
Figure 9. Maximum Safe Operating Area.
10
0
1
Figure 7. Gate Charge Characteristics.
0.1
I
0.0001
D
0.001
= 7.3A
0.01
SINGLE PULSE
R
0.1
R
V
0.0001
JA
T
DS(ON)
1
GS
A
10
= 96
= 25
= 10V
LIMIT
o
D = 0.5
o
C/W
C
V
0.2
1
0.1
DS
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
20
Q
0.01
g
, GATE CHARGE (nC)
SINGLE PULSE
DC
10s
0.001
1s
100ms
30
10
10ms
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1ms
V
100 s
DS
40
= 20V
100
0.01
80V
50
50V
1000
60
0.1
4500
4000
3500
3000
2500
2000
1500
1000
40
30
20
10
500
0
0.1
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
20
V
1
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
t
40
1
, TIME (sec)
10
10
C
C
OSS
ISS
60
P(pk)
Duty Cycle, D = t
C
T
R
RSS
J
R
JA
100
- T
SINGLE PULSE
100
R
JA
(t) = r(t) + R
A
T
JA
t
1
= 96 °C/W
A
80
= P * R
t
= 96°C/W
= 25°C
2
FDD3670 Rev C(W)
V
f = 1MHz
GS
= 0 V
JA
1
(t)
JA
/ t
1000
100
2
1000