FQP65N06 Fairchild Semiconductor, FQP65N06 Datasheet - Page 4

• Manufacturer Part Number: FQP65N06
• Description: MOSFET N-CH 60V 65A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP65N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 65 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
-100
10
10
10
10
Figure 9. Maximum Safe Operating Area
3
2
1
0
10
Figure 7. Breakdown Voltage Variation
-1
-50
V
T
DS
J
vs. Temperature
, Junction Tem perature [
, Drain-Source Voltage [V]
0
10
1 0
1 0
1 0
0
Operation in This Area
is Limited by R
※ Notes :
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 25
= 175
- 5
D = 0 . 5
0 . 0 2
50
0 . 0 5
0 . 0 1
0 . 2
o
0 . 1
C
o
C
DS(on)
DC
Figure 11. Transient Thermal Response Curve
100
10
1 0
10 ms
(Continued)
o
1
C]
t
- 4
s i n g l e p u l s e
1
※ Notes :
1 ms
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
1. V
2. I
D
GS
= 250 μ A
100 s
= 0 V
150
1 0
- 3
10
200
2
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
-100
70
60
50
40
30
20
10
0
25
Figure 8. On-Resistance Variation
1 0
※ N o t e s :
Figure 10. Maximum Drain Current
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
-50
P
50
DM
θ
J M
J C
- T
( t ) = 1 . 0 0 ℃ /W M a x .
C
vs. Case Temperature
= P
T
T
J
vs. Temperature
, Junction Temperature [
C
t
1
0
, Case Temperature [ ℃ ]
D M
75
1 0
t
2
* Z
0
θ
1
/t
J C
2
( t )
50
100
1 0
1
100
125
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= 32.5 A
= 10 V
Rev. A1. May 2001
175
200