HUFA76429S3S Fairchild Semiconductor, HUFA76429S3S Datasheet
HUFA76429S3S
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HUFA76429S3S Summary of contents
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... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2001 Fairchild Semiconductor Corporation HUFA76429D3, HUFA76429D3S ...
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... CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ©2001 Fairchild Semiconductor Corporation o C, Unless Otherwise Specified SYMBOL TEST CONDITIONS = 250 µ (Figure 12) ...
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... SINGLE PULSE 0. FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 600 V = 10V GS 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION ©2001 Fairchild Semiconductor Corporation 150 175 25 125 o C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY ...
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... FIGURE 7. TRANSFER CHARACTERISTICS 20A 10A GATE TO SOURCE VOLTAGE (V) GS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT ©2001 Fairchild Semiconductor Corporation (Continued) 100 100µs 1ms 10ms 100 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING - ...
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... FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 400 V = 4.5V 30V 20A 300 t r 200 t f 100 GATE TO SOURCE RESISTANCE (Ω) GS FIGURE 15. SWITCHING TIME vs GATE RESISTANCE ©2001 Fairchild Semiconductor Corporation (Continued 250µ 120 160 200 o C) FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN 0V 1MHz ISS GS GD ≅ ...
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... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT g(REF) FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0.01Ω DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS ...
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... NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. ©2001 Fairchild Semiconductor Corporation rev 5 July 1999 DPLCAP ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...