FDD2572 Fairchild Semiconductor, FDD2572 Datasheet - Page 10

• Manufacturer Part Number: FDD2572
• Description: MOSFET N-CH 150V 29A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD2572

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 54 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.054 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 135000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD2572; FDD2572TR

©2002 Fairchild Semiconductor Corporation
SPICE Thermal Model
REV 26 April 2002
FDD2572
CTHERM1 TH 6 3.8e-3
CTHERM2 6 5 4.0e-3
CTHERM3 5 4 4.2e-3
CTHERM4 4 3 4.3e-3
CTHERM5 3 2 8.5e-3
CTHERM6 2 TL 3.0e-2
RTHERM1 TH 6 5.5e-4
RTHERM2 6 5 5.0e-3
RTHERM3 5 4 4.5e-2
RTHERM4 4 3 10.5e-2
RTHERM5 3 2 3.7e-1
RTHERM6 2 TL 3.8e-1
SABER Thermal Model
SABER thermal model FDD2572
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =3.8e-3
ctherm.ctherm2 6 5 =4.0e-3
ctherm.ctherm3 5 4 =4.2e-3
ctherm.ctherm4 4 3 =4.3e-3
ctherm.ctherm5 3 2 =8.5e-3
ctherm.ctherm6 2 tl =3.0e-2
rtherm.rtherm1 th 6 =5.5e-4
rtherm.rtherm2 6 5 =5.0e-3
rtherm.rtherm3 5 4 =4.5e-2
rtherm.rtherm4 4 3 =10.5e-2
rtherm.rtherm5 3 2 =3.7e-1
rtherm.rtherm6 2 tl =3.8e-1
}
RTHERM5
RTHERM1
RTHERM2
RTHERM3
RTHERM6
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM6
CTHERM1
CTHERM3
CTHERM4
FDD2572 / FDU2572 Rev. B