IRF740B Fairchild Semiconductor, IRF740B Datasheet - Page 5

• Manufacturer Part Number: IRF740B
• Description: MOSFET N-CH 400V 10A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRF740B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 134W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-2. Transient Thermal Response Curve for IRFS740B
- 1
- 2
- 1
- 2
Figure 11-1. Transient Thermal Response Curve for IRF740B
0
1 0
0
1 0
- 5
- 5
D = 0 .5
0 . 0 2
D = 0 .5
0 . 0 2
0 . 0 1
0 . 0 5
0 . 0 1
0 . 0 5
0 . 2
0 . 2
0 . 1
0 . 1
1 0
1 0
(Continued)
s in g le p u ls e
- 4
- 4
s in g le p u ls e
t
t
1
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
- 3
- 3
1 0
1 0
- 2
- 2
※ N o te s :
1 0
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
※ N o te s :
- 1
- 1
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
P
θ J C
J M
DM
DM
θ J C
J M
- T
(t) = 0 .9 3 ℃ /W M a x .
- T
C
(t) = 2 .8 6 ℃ /W M a x .
= P
C
= P
t
t
D M
1
1
t
t
1 0
1 0
D M
2
2
* Z
0
* Z
0
1
θ J C
/t
2
1
θ J C
/t
(t)
2
(t)
1 0
1 0
1
1
Rev. A, November 2001