FQPF8N60CFT Fairchild Semiconductor, FQPF8N60CFT Datasheet - Page 3

• Manufacturer Part Number: FQPF8N60CFT
• Description: MOSFET N-CH 600V 6.26A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF8N60CFT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 3.13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.26A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1255pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQPF8N60CF Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
2000
1800
1600
1400
1200
1000
10
800
600
400
200
10
10
-1
0
1
0
10
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
-1
-1
Top :
Bottom : 5.0 V
0
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
V
V
5
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
0
0
I
D
C
, Drain Current [A]
C
C
oss
iss
rss
10
V
GS
= 10V
C
C
C
iss
oss
rss
10
※
= C
10
= C
= C
1. 250µs Pulse Test
2. T
1
Notes :
1
gs
gd
ds
C
+ C
+ C
= 25 ℃
15
※
gd
V
gd
Note : T
(C
※
GS
1. V
2. f = 1 MHz
ds
Notes ;
= 20V
= shorted)
GS
J
= 0 V
= 25 ℃
20
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
10
10
-1
-1
1
0
1
0
12
10
0.2
2
8
6
4
2
0
0
Variation vs. Source Current
and Temperatue
25
o
C
150
0.4
o
C
150 ℃
5
4
V
V
Q
SD
GS
V
0.6
G
, Source-Drain voltage [V]
DS
, Gate-Source Voltage [V]
10
, Total Gate Charge [nC]
= 480V
V
25 ℃
DS
-55
= 300V
V
o
DS
C
= 120V
0.8
6
15
1.0
20
※
※
1. V
2. 250µs Pulse Test
Notes :
1. V
2. 250µs Pulse Test
* Note : I
8
Notes :
GS
DS
= 0V
= 40V
1.2
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25
D
= 6.26A
1.4
10
30