NDS8410A Fairchild Semiconductor, NDS8410A Datasheet
NDS8410A
Manufacturer Part Number
NDS8410A
Description
MOSFET N-CH 30V 10.8A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.NDS8410A.pdf
(5 pages)
Specifications of NDS8410A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 10.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 5V
Input Capacitance (ciss) @ Vds
1620pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.7 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
0045
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS8410A
Manufacturer:
FAIRCHILD
Quantity:
113
Company:
Part Number:
NDS8410A
Manufacturer:
FSC
Quantity:
1 100
Part Number:
NDS8410A
Manufacturer:
FSC
Quantity:
20 000
Part Number:
NDS8410A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
NDS8410A_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
NDS8410A
Single 30V N-Channel PowerTrench MOSFET
General Description
This
Fairchild’s
technology.
especially tailored to minimize on-state resistance and
provide superior switching performance. These devices
are particularly suited for low voltage applications such
as notebook computer power management and other
battery powered circuits where fast switching, low in-
line power loss, and resistance to transients are
needed.
2004 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
N-Channel
NDS8410A
SO-8
proprietary,
This very high density process is
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
MOSFET
D
D
Pin 1
D
high
D
SO-8
D
D
– Continuous
– Pulsed
are
D
NDS8410A
cell
D
Device
Parameter
produced
S
density,
S
S
S
S
S
G
G
DMOS
T
A
using
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
Features
10.8 A, 30 V
Ultra-low gate charge
High performance trench technology for extremely
low R
High power and current handling capability
DS(ON)
5
6
7
8
Tape width
R
R
DS(ON)
DS(ON)
–55 to +150
12mm
Ratings
10.8
2.5
1.2
1.0
30
50
50
25
20
= 12 m
= 17 m
@ V
@ V
October 2004
4
3
2
1
GS
GS
NDS8410A Rev D1(W)
= 10 V
= 4.5 V
2500 units
Quantity
Units
C/W
W
V
A
C
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Datasheet:
NDS8410A Summary of contents
Page 1
... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ October 2004 DS(ON 4.5 V DS(ON Ratings Units 10 2.5 W 1.2 1.0 –55 to +150 C 50 C/W 25 Tape width Quantity 12mm 2500 units NDS8410A Rev D1(W) ...
Page 2
... CA b) 105°C/W when 2 2 mounted on a .04 in pad copper Min Typ Max Units mV 100 –4.9 mV 9 1620 pF 380 pF 160 pF 1 4.8 nC 5.6 nC 2.1 A 0.82 1 125°C/W when mounted on a minimum pad. NDS8410A Rev D1(W) ...
Page 3
... C 0.01 0.001 0.0001 3 0.2 V Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 5. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) SD NDS8410A Rev D1(W) ...
Page 4
... Figure 8. Capacitance Characteristics. 50 100 s 1ms 40 10ms 100 0.001 Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 125 C 0.01 0 TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 1000 NDS8410A Rev D1(W) 30 100 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...