FQPF9N50C Fairchild Semiconductor, FQPF9N50C Datasheet

MOSFET N-CH 500V 9A TO-220F

FQPF9N50C

Manufacturer Part Number
FQPF9N50C
Description
MOSFET N-CH 500V 9A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF9N50C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1030pF @ 25V
Power - Max
44W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2003 Fairchild Semiconductor Corporation
FQP9N50C/FQPF9N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 9 A, 500V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
FQPF Series
FQP9N50C
FQP9N50C
DS(on)
1.07
0.93
62.5
135
5.4
0.5
36
9
-55 to +150
=
13.5
500
360
300
0.8
4.5
9
30
FQPF9N50C
FQPF9N50C
G
@V
! ! ! !
! ! ! !
5.4 *
0.35
2.86
62.5
36 *
9 *
44
--
QFET
GS
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
= 10 V
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
Rev. A, June 2003
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQPF9N50C

FQPF9N50C Summary of contents

Page 1

... S FQP9N50C FQPF9N50C Units 500 5.4 5 360 13.5 mJ 4.5 V/ns 135 44 W 1.07 0.35 W/°C -55 to +150 °C 300 °C FQP9N50C FQPF9N50C Units 0.93 2.86 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, June 2003 TM ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature mH 9A 50V 9A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 500 400 125° ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 1600 C iss 1200 C oss 800 C rss 400 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 10V 20V GS ※ Note : ℃ ...

Page 4

... 150 Figure 9-2. Maximum Safe Operating Area 100 125 150 ※ Notes : 4 - 100 150 200 Junction Temperature [ Temperature Operation in This Area is Limited by R DS(on 100 100 ms DC ※ Notes : 150 Single Pulse Drain-Source Voltage [V] DS for FQPF9N50C Rev. A, June 2003 ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP9N50C Figure 11-2. Transient Thermal Response Curve for FQPF9N50C ©2003 Fairchild Semiconductor Corporation (Continued) ※ θ ※ ℃ θ ℃ θ θ Rev. A, June 2003 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2003 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, June 2003 ...

Page 9

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2003 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, June 2003 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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