FQP9N50C Fairchild Semiconductor, FQP9N50C Datasheet - Page 4

• Manufacturer Part Number: FQP9N50C
• Description: MOSFET N-CH 500V 9A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP9N50C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
10
10
10
10
10
10
1.2
1.1
1.0
0.9
0.8
8
6
4
2
0
-1
-2
25
-100
Figure 7. Breakdown Voltage Variation
2
1
0
10
0
Figure 10. Maximum Drain Current
-50
50
vs Case Temperature
T
V
T
vs Temperature
J
DS
10
, Junction Temperature [
C
for FQP9N50C
, Case Temperature [ ℃ ]
, Drain-Source Voltage [V]
1
0
Operation in This Area
is Limited by R
75
DC
※ Notes :
50
DS(on)
1. T
2. T
3. Single Pulse
100 ms
C
J
= 150
= 25
100
10 ms
o
10
C
o
C
(Continued)
1 ms
2
100
o
C]
100 s
※ Notes :
1. V
2. I
125
D
GS
= 250 μ A
150
= 0 V
10 s
10
3
150
200
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
2
1
0
10
-100
0
Figure 8. On-Resistance Variation
-50
V
for FQPF9N50C
T
DS
vs Temperature
10
J
, Junction Temperature [
, Drain-Source Voltage [V]
1
Operation in This Area
is Limited by R
0
※ Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
DC
DS(on)
50
o
100 ms
C
o
C
10 ms
10
2
100
1 ms
o
C]
100 s
※ Notes :
10 s
1. V
2. I
150
D
GS
= 4.5 A
= 10 V
10
3
200
Rev. A, June 2003