FQB19N20CTM Fairchild Semiconductor, FQB19N20CTM Datasheet

MOSFET N-CH 200V 19A D2PAK

FQB19N20CTM

Manufacturer Part Number
FQB19N20CTM
Description
MOSFET N-CH 200V 19A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQB19N20CTM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
170 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
1080pF @ 25V
Power - Max
3.13W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
10.8 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
19 A
Power Dissipation
3130 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQB19N20CTM
Manufacturer:
FSC
Quantity:
12 000
Company:
Part Number:
FQB19N20CTM
Quantity:
4 500
©2008 Fairchild Semiconductor Corporation
FQB19N20C/FQI19N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
θJA
, T
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
S
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C)*
Parameter
= 25°C)
Parameter
G
T
C
C
C
D
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
I
FQI Series
Features
• 19.0A, 200V, R
• Low gate charge ( typical 40.5 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
2
-PAK
FQB19N20C / FQI19N20C
Typ
DS(on)
--
--
--
-55 to +150
= 0.17Ω @V
19.0
12.1
76.0
± 30
19.0
13.9
3.13
1.11
200
433
139
300
5.5
G
Max
62.5
0.9
40
GS
= 10 V
October 2008
D
S
QFET
Units
W/°C
Units
Rev. A1, Oct 2008
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQB19N20CTM

FQB19N20CTM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient* θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation Features • 19.0A, 200V, R • Low gate charge ( typical 40.5 nC) • Low Crss ( typical 85 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... G ≤ 19.0A, di/dt ≤ 300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

Page 3

... Drain Current and Gate Voltage 3000 2500 2000 C iss 1500 C oss 1000 C rss ※ Notes : 500 MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation 1 10 150 ※ Notes : 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS Note : ℃ ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 20 100 µ Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporat PAK Dimensions in Millimeters Rev. A1, Oct 2008 ...

Page 8

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A1, Oct 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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