FDB7030BL Fairchild Semiconductor, FDB7030BL Datasheet - Page 2

• Manufacturer Part Number: FDB7030BL
• Description: MOSFET N-CH 30V 60A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB7030BL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 5V
• Input Capacitance (ciss) @ Vds: 1760pF @ 15V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 85 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 60000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Fall Time: 19 ns
• Rise Time: 12 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
W
I
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
R
f
AR
DSS
GSS
D(on)
d(on)
r
d(off)
S
rr
BV
V
FS
GS(th)
SD
DS(on)
iss
oss
rss
G
g
gs
gd
rr
DSS
GS(th)
DSS
T
T
DSS
J
J
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–
Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
(Note 2)
(Note 2)
(Note 1)
T
V
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
D
D
F
A
iF
DD
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= 25°C unless otherwise noted
= 30 A,
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
/d
= 10 V, I
= 24 V,
=
= V
= 4.5 V,
= 10V,
= 15 V,
= 15 mV,
= 15 V,
= 15 V,
= 0 V,
= 10 V,
= 10 V,
= 15V,
= 10 V,
= 5 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
20 V, V
,
D
I
S
= 30 A, T
= 30 A
I
I
I
I
I
V
I
V
D
D
D
D
D
V
I
f = 1.0 MHz
I
R
D
D
D
GS
DS
GS
= 250 A
= 250 A
DS
GEN
= 60 A
= 30 A
= 25 A
= 30 A,
= 30 A
= 1 A,
= 0 V
= 0 V
= 10 V
= 0 V,
= 6
J
=125 C
(Note 1)
Min Typ
30
30
1
1760
10.1
0.92
440
185
1.9
6.8
8.5
1.2
5.4
6.4
22
–5
85
12
12
30
19
17
FDP7030BL/FDB7030BL Rev D1(W)
Max
1.3
73
60
12
18
22
22
48
33
24
60
30
20
100
1
3
9
Units
mV/ C
mV/ C
m
mJ
nA
nC
nC
nC
nS
nC
pF
pF
pF
ns
ns
ns
ns
A
V
V
A
S
A
V
A