FQP9P25 Fairchild Semiconductor, FQP9P25 Datasheet - Page 3

• Manufacturer Part Number: FQP9P25
• Description: MOSFET P-CH 250V 9.4A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP9P25

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 620 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.62 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5.7 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.4 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
2400
2000
1600
1200
800
400
10
2.0
1.5
1.0
0.5
0.0
10
10
-1
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : -5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
10
-V
-V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
10
, Drain Current [A]
0
0
V
GS
= - 20V
V
C
GS
C
C
20
oss
iss
rss
= - 10V
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
10
※ Note : T
1. 250μ s Pulse Test
2. T
30
gs
ds
gd
1
1
C
+ C
+ C
= 25℃
gd
※ Notes :
gd
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
GS
= shorted)
= 0 V
40
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
5
Variation vs. Source Current
0.5
25℃
150℃
150℃
4
-V
-V
10
Q
SD
and Temperature
GS
G
1.0
25℃
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
DS
V
DS
= -200V
15
V
DS
= -125V
-55℃
= -50V
1.5
6
20
2.0
※ Notes :
25
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= -50V
= 0V
2.5
30
D
= -9.4 A
Rev. A2, December 2000
3.0
10
35