FQD18N20V2TM Fairchild Semiconductor, FQD18N20V2TM Datasheet

MOSFET N-CH 200V 15A DPAK

FQD18N20V2TM

Manufacturer Part Number
FQD18N20V2TM
Description
MOSFET N-CH 200V 15A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Type
Power MOSFETr
Datasheets

Specifications of FQD18N20V2TM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
1080pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.14Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±30V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Fall Time
62 ns
Rise Time
133 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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©2009 Fairchild Semiconductor Corporation
FQD18N20V2 / FQU18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D-PAK
FQD Series
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
T
D
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 15A, 200V, R
• RoHS Compliant
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
I-PAK
FQU Series
FQD18N20V2 / FQU18N20V2
DS(on)
Typ
--
--
--
-55 to +150
= 0.14
9.75
0.67
340
300
200
8.3
6.5
2.5
15
60
15
83
30
G
@V
!
!
Max
110
1.5
50
GS
! "
! "
January 2009
= 10 V
QFET
!
!
!
!
S
D
"
"
"
"
"
"
Rev. B2,January 2009
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
W
V
A
A
A
V
A
®

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FQD18N20V2TM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation Features • 15A, 200V, R • Low gate charge ( typical 20 nC) • Low Crss ( typical 25 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 1.58mH 18A 50V ≤ 18A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 200 ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2500 2000 1500 1000 C 500 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test ℃ 10V 20V ※ Note : ℃ ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2009 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 20 15 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2009 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2009 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) ©2009 Fairchild Semiconductor Corporation 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 Rev. B2, January 2009 ...

Page 8

... Mechanical Dimensions ©2009 Fairchild Semiconductor Corporation I - PAK Dimensions in Millimeters Rev. B2, January 2009 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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