BS170 Fairchild Semiconductor, BS170 Datasheet - Page 2

• Manufacturer Part Number: BS170
• Description: MOSFET N-CH 60V 500MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BS170

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.32 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

© 2010 Fairchild Semiconductor Corporation
BS170 / MMBF170 Rev. E2
Electrical Characteristics
Note:
Ordering Information
1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
Symbol
OFF CHARACTERISTICS
ON CHARACTERISTICS (Notes 1)
Dynamic Characteristics
Switching Characteristics (Notes 1)
R
V
BV
I
DS(ON)
I
GSSF
C
C
GS(th)
C
g
Part Number
DSS
t
t
BS170_D26Z
BS170_D27Z
BS170_D74Z
BS170_D75Z
oss
on
off
FS
DSS
iss
rss
MMBF170
BS170
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate Threshold Voltage
Static Drain-Source On-Resistance V
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Parameter
Package
SOT-23
TO-92
TO-92
TO-92
TO-92
TO-92
T
A
=25°C unless otherwise noted
Package Type
V
V
V
V
V
V
I
V
f = 1.0MHz
V
V
V
V
V
V
V
V
Tape and Reel
Tape and Reel
Tape and Reel
D
GS
DS
GS
DS
GS
DS
DS
DS
DD
GS
DD
GS
DD
GS
DD
GS
= 200mA
AMMO
AMMO
= 25V, V
= V
= 10V, I
= 10V, V
= 0V, I
= 15V, V
= 10V, I
= 25V, I
= 10V, R
= 25V, I
= 10V, R
= 25V, I
= 10V, R
= 25V, I
= 10V, R
BULK
≥ 2 V
Conditions
GS
2
DS(on)
, I
D
D
D
D
D
D
D
D
= 100μA
GS
DS
GS
GEN
GEN
GEN
GEN
= 200mA
= 200mA
= 200mA,
= 500mA,
= 200mA,
= 500mA,
= 1mA
,
= 0V
= 0V
= 0V,
= 25Ω
= 50Ω
= 25Ω
= 50Ω
Lead Frame
STRAIGHT
MMBF170
MMBF170
MMBF170
FORMING
FORMING
FORMING
FORMING
BS170
BS170
BS170
Type
All
All
All
All
All
All
All
All
Min.
0.8
60
Typ.
320
320
2.1
1.2
24
17
7
Pin array
D G S
D G S
D G S
D G S
D G S
Max. Units
www.fairchildsemi.com
0.5
10
40
30
10
10
10
10
10
3
5
mS
μA
nA
pF
pF
pF
ns
ns
V
V
Ω