FDD6N50TM Fairchild Semiconductor, FDD6N50TM Datasheet

FDD6N50TM

Manufacturer Part Number

FDD6N50TM

Description

MOSFET N-CH 500V 6A DPAK

Manufacturer

Fairchild Semiconductor

Series

UniFET™r

Datasheet

1.FDD6N50TM.pdf (9 pages)

Specifications of FDD6N50TM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

900 mOhm @ 3A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

16.6nC @ 10V

Input Capacitance (ciss) @ Vds

940pF @ 25V

Power - Max

89W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.76 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

6 A

Power Dissipation

89 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

FDD6N50TM

Quantity:

2 500

Company:

H&T Electronics

Part Number:

FDD6N50TM

Quantity:

4 500

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FDD6N50/FDU6N50 REV. A

FDD6N50

500V N-Channel MOSFET

Features

• 6A, 500V, R

• Low gate charge ( typical 12.8 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

Thermal Characteristics

dv/dt

DSS

GSS

Symbol

θJC

θJA

STG

rss

( typical 9 pF)

DS(on)

Drain-Source Voltage

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Operating and Storage Temperature Range

= 0.9Ω @V

/FDU6N50

D-PAK

FDD Series

= 10 V

- Continuous (T

- Pulsed

- Derate above 25°C

Parameter

= 25°C)

= 100°C)

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

(Note 2)

(Note 1)

(Note 3)

(Note 1)

I-PAK

FDU Series

FDD6N50/FDU6N50

Min.

-55 to +150

0.71

500

±30

270

300

3.8

8.9

4.5

UniFET

Max.

1.4

January 2006

www.fairchildsemi.com

Unit

W/°C

V/ns

Unit

°C/W

°C

Related parts for FDD6N50TM

FDD6N50TM Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FDD6N50/FDU6N50 REV. A Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Package Marking and Ordering Information Device Marking Device FDD6N50 FDD6N50TM FDD6N50 FDD6N50TF FDU6N50 FDU6N50TU Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics Top : 10.0 V 8.0V 7 6.5 V 6.0 V 5.5 V Bottom : 5 Drain-Source Voltage ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area 2 10 Operation in This Area is Limited by ...

Page 5

Unclamped Inductive Switching Test Circuit & Waveforms FDD6N50/FDU6N50 REV. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

FDD6N50/FDU6N50 REV. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

Mechanical Dimensions FDD6N50/FDU6N50 REV. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

Mechanical Dimensions FDD6N50/FDU6N50 REV. A (Continued) I-PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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