FDD6685 Fairchild Semiconductor, FDD6685 Datasheet - Page 4

• Manufacturer Part Number: FDD6685
• Description: MOSFET P-CH 30V 11A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6685

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 5V
• Input Capacitance (ciss) @ Vds: 1715pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 52000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 21 ns
• Rise Time: 11 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6685; FDD6685TR

Typical Characteristics
40
30
20
10
40
30
20
10
0
0
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
1
0
Figure 1. On-Region Characteristics.
1
V
-50
Figure 5. Transfer Characteristics.
GS
-6.0V
V
= -10V
DS
I
V
D
GS
= -11.0A
= -5V
-25
= -10V
-V
-V
2
GS
0
T
DS
, GATE TO SOURCE VOLTAGE (V)
J
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
-5.0V
1
25
-4.5V
50
T
3
A
= -55
-4.0V
75
o
C
100
2
-3.5V
25
o
4
C)
125
o
-3.0V
C
125
o
150
C
175
3
5
Figure 6. Body Diode Forward Voltage Variation
0.08
0.06
0.04
0.02
0.0001
0.001
0.01
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
0
Figure 4. On-Resistance Variation with
100
with Source Current and Temperature.
0.1
10
2
1
2
1
0
0
Drain Current and Gate Voltage.
V
V
T
GS
GS
A
= 25
= 0V
= -3.5V
Gate-to-Source Voltage.
0.2
-4.0V
-V
o
C
-V
SD
2
T
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
A
= 125
-4.5V
, GATE TO SOURCE VOLTAGE (V)
0.4
-I
o
D
C
T
, DRAIN CURRENT (A)
A
-5.0V
= 125
4
0.6
25
o
6
o
C
C
-6.0V
0.8
6
-55
o
-8.0V
C
1
8
FDD6685 Rev D (W)
8
I
D
1.2
= -5.5A
-10V
1.4
10
10