FQD2N80TM Fairchild Semiconductor, FQD2N80TM Datasheet - Page 2

• Manufacturer Part Number: FQD2N80TM
• Description: MOSFET N-CH 800V 1.8A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r
• Type: Power MOSFETr

Specifications of FQD2N80TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.3 Ohm @ 900mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 6.3Ohm
• Drain-source On-volt: 800V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 1.8A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQD2N80TMTR

Change To
Product Id Description : All devices packaged in D/I-PAK(Non JEDEC TYPE)
Affected FSIDs :
FJD3076TF_NL
FQD10N20CTF_NL
FJD3076TM
FQD10N20CTM
FQD10N20CTF
FQD10N20CTM_NL
Pg. 2