FQP6N40CF Fairchild Semiconductor, FQP6N40CF Datasheet - Page 4

• Manufacturer Part Number: FQP6N40CF
• Description: MOSFET N-CH 400V 6A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQP6N40CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 73W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 Ohms
• Forward Transconductance Gfs (max / Min): 4.7 S
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 73 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP6N40CF/FQPF6N40CF Rev. B
Typical Performance Characteristics
Figure 9-1. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
Figure 10. Maximum Drain Current
6
5
4
3
2
1
0
10
10
10
10
10
25
-1
-2
2
1
0
1.2
1.1
1.0
0.9
0.8
10
-100
0
vs. Case Temperature
Operation in This Area
is Limited by R
vs. Temperature
for FQP6N40CF
50
-50
V
T
DS(on)
10
T
C
DS
, Case Temperature [ ]
J
1
, Junction Temperature [
, Drain-Source Voltage [V]
※
0
1. T
2. T
3. Single Pulse
75
Notes :
C
J
= 150
= 25
o
DC
C
o
C
50
100 ms
100
10 ms
10
2
℃
1 ms
100
100
o
C]
※
µ
s
1. V
2. I
125
Notes :
D
GS
= 250 µA
10
= 0 V
150
µ
s
10
3
150
200
(Continued)
4
10
10
10
10
10
-1
-2
2
1
0
10
Figure 8. On-Resistance Variation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 9-2. Maximum Safe Operating Area
0
-100
-50
V
10
DS
for FQPF6N40CF
T
1
vs. Temperature
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
J
, Junction Temperature [
0
DC
※
DS(on)
1. T
2. T
3. Single Pulse
100 ms
Notes :
50
C
J
= 150
= 25
10 ms
o
C
1 ms
o
10
C
2
100
100
o
C]
µ
s
10
※
1. V
2. I
Notes :
150
µ
D
s
GS
= 3 A
= 10 V
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10
3
200