FQI15P12TU Fairchild Semiconductor, FQI15P12TU Datasheet - Page 8

• Manufacturer Part Number: FQI15P12TU
• Description: MOSFET P-CH 120V 15A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI15P12TU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Package Dimensions
1.27
2.54 TYP
0.10
10.00
9.90
(Continued)
0.20
0.20
2.54 TYP
1.47
0.80
0.10
I
0.10
2
-PAK
0.50
+0.10
–0.05
4.50
Dimensions in Millimeters
0.20
2.40
1.30
+0.10
–0.05
Rev. A, December 2003
0.20