FQPF2N70 Fairchild Semiconductor, FQPF2N70 Datasheet - Page 4

• Manufacturer Part Number: FQPF2N70
• Description: MOSFET N-CH 700V 2A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF2N70

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.3 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 700V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.3 Ohms
• Forward Transconductance Gfs (max / Min): 2.45 S
• Drain-source Breakdown Voltage: 700 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 28 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
-1
-2
Figure 9. Maximum Safe Operating Area
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
vs. Temperature
V
10
J
, Junction Temperature [
DS
Operation in This Area
is Limited by R
1
0
, Drain-Source Voltage [V]
1 0
1 0
1 0
※ Notes :
-1
-2
0
1 0
1. T
2. T
3. Single Pulse
C
J
-5
= 150
= 25
D = 0 .5
0 . 0 2
0 . 0 1
DS(on)
0 . 0 5
DC
0 . 1
0 . 2
50
o
C
o
C
100 ms
Figure 11. Transient Thermal Response Curve
10
10 ms
s in g le p u ls e
2
(Continued)
100
1 0
o
1 ms
-4
C]
100 s
※ Note :
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
D
150
G S
= 250 μ A
= 0 V
10
1 0
3
-3
200
1 0
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.5
1.0
0.5
0.0
-100
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
※ N o te s :
-1
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
DM
-50
θ J C
J M
50
- T
vs. Case Temperature
(t) = 4 .4 6 ℃ /W M a x .
C
= P
vs. Temperature
t
T
1
J
T
t
, Junction Temperature [
1 0
2
C
D M
0
, Case Temperature [ ℃ ]
* Z
0
75
1
θ J C
/t
2
(t)
50
100
1 0
1
100
o
C]
125
※ Note :
1. V
2. I
150
D
GS
= 3.1 A
= 10 V
Rev. A, March 2003
150
200